Color Filter Based on a Sub-Wavelength Patterned Poly-Silicon Grating Fabricated using Laser Interference Lithography

Interference Lithography for Patterned Media

Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching.

By combining laser interference lithography and metal-assisted etching we were able to produce arrays of silicon nanowires with uniform diameters as small as 65 nm and densities exceeding 2 x 10(7) mm(-2). The wires are single crystalline, vertically aligned, arranged in a square pattern and obey strict periodicity over several cm(2). The applied technique allows for a tailoring of nanowire siz...

Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching

In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE) was carried out with silver catalyst. Provided solution (or materiel) in combination with laser interference lithogr...

Tunable visual color filter using microfluidic grating.

This paper reports a tunable visual color filter based on a microfluidic transmission grating. The grating lines are formed by the microflows in an array of evenly spaced straight microchannels. In experimental study, the transmission of white light measures a shift of visual color from red to blue in the zeroth order diffraction in response to a change of the refractive index from 1.3290 to 1....

Nanoscale silicon field effect transistors fabricated using imprint lithography

We report the fabrication and characterization of nanoscale silicon field effect transistors using nanoimprint lithography. With this lithographic technique and dry etching, we have patterned a variety of nanoscale transistor features in silicon, including 100 nm wire channels, 250-nm-diam quantum dots, and ring structures with 100 nm ring width, over a 232 cm lithography field with good unifor...